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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3737 description high collector-base breakdown voltage- : v (br)cbo = 800v(min) high switching speed wide area of safe operation applications designed for high speed switching and horizontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1200 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b b base current-continuous 3 a collector power dissipation @ t c =25 100 p c collector power dissipation @ t a =25 3 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3737 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 800 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.4a b 2.0 v i cbo collector cutoff current v cb = 1000v; i e = 0 100 a i ebo emitter cutoff current v eb = 6v; i c = 0 100 a h fe dc current gain i c = 2a; v ce = 5v 6 20 switching times t on turn-on time 1.0 s t stg storage time 3.5 s t f fall time i c = 2a; i b1 = 0.4a, i b2 = -0.8a; v cc = 250v 0.3 s isc website www.iscsemi.cn 2 www.iscsemi.cn |
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